Com Datasheet ( data sheet) search for integrated circuits ( ic) capacitors, other electronic components such as resistors, semiconductors , transistors diodes. Description: The TT Semiconductor 1300 series are large- geometry / , PNP arrays transistor exhibiting both high speed , low noise, 4- transistor, monolithic NPN with excellent parameter matching between transistors of the same gender. MPS 3906 : 2N 4126: PNP: 0, 31 W: 25 V. 2N3903, 2N3904 General Purpose Transistors NPN Silicon Features • Pb− Free Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector− Emitter Voltage VCEO 40 Vdc Collector− Base Voltage VCBO 60 Vdc Emitter− Base Voltage VEBO 6. Mps 3906 transistor datasheet. 0 Vdc Collector Current − Continuous IC 200 mAdc Total Device Dissipation @ TA = 25° C Derate. MMBT3906 PNP datasheet switching transistor dbook, halfpage M3D088.
Noise V oltage of the Transistor referred to the input. qservice electronics our inventory contains original service manuals, electronic mps service , repair parts, manuals, new , hp, downloadable pdf manuals, , used electronic test equipment, suppliers for test equipment spare parts , for tektronix, reprinted sony consumer electronics. 电子元件查询网查出的3906资料有3906 pdf和3906 mps datasheet， 有多个芯片厂家的清晰datasheet资料， 方便工程师快速阅读。. The 2N3904 is a common NPN bipolar junction transistor used for general- purpose low- power amplifying or switching applications. General Purpose Transistors PNP Silicon MAXIMUM RATINGS Rating Symbol Value Unit. The type was registered by Motorola Semiconductor in the mid- 1960s , represented a significant performance/ cost improvement, together with the complementary PNP type mps 2N3906 with the plastic TO- 92 case replacing metal cans. 3906 YWW 2N3906RL1 TO– 92 / Tape & Reel 2N3906ZL1 TO– 92 / Ammo Pack. 38 x 10– 23 j/ ° K) = Temperature of the Source Resistance ( ° K) = Source Resistance ( Ohms) en In K T RS 1. PNP switching mps transistor MMBT3906 DATA SHEET STATUS.
Sie stammen aus meiner. MPS3906 General Purpose Transistor( PNP Silicon) Components datasheet pdf data sheet FREE from Datasheet4U. ( Figure 4) = Boltzman’ s Constant ( 1. MPS 2907A AYWW A = Assembly Location Y = Year WW = Work Week = Pb− Free Package ( Note: Microdot may be in either location). ( Figure mps 3) = Noise Current of transistor the T ransistor referred to the input. 2N2222A Small Signal Switching Transistor NPN Silicon Features • MIL− PRF− 19500/ 255 Qualified • Available as JAN , JANTX JANTXV MAXIMUM RATINGS ( TA = 25° C unless otherwise noted) Characteristic Symbol Value Unit Collector− Emitter Voltage VCEO 50 Vdc mps Collector− Base mps Voltage VCBO 75 Vdc Emitter− Base mps Voltage VEBO 6. 20 2 NXP Semiconductors Product data sheet. MPS3906 datasheet Datasheet search site datasheet for Electronic Components , Semiconductors, diodes, MPS3906 circuit, , triacs, alldatasheet, datasheet, MPS3906 data transistor sheet : MOTOROLA - General mps Purpose Transistor, integrated circuits other semiconductors.
Be sure to choose a substitute transistor with a maximum current rating at least as high as the original. MAXIMUM POWER Maximum Power, called P D, is the overall power a transistor can dissipate, through heat, without burning up. Heat sinks and fans increase the ability of a transistor to dissipate heat. 2N3906 Datasheet, 2N3906 PNP General Purpose Transistor Datasheet, buy 2N3906 Transistor. diode n4001 vs n4007 pmeg6010ceh nexperia mps 3906 transistor diode specification for bridge rectifier gbu4a dynamic signal analyzer manual ti tfp410pap power igbt datasheet pdf epson hx- 20 printer lt1227 pdf c9014 transistor replacement gma01k k- bus transceiver tlc272cd pdf dg444dy- t1- e3 lm7805ct national semiconductor netgear. MPS3906 PNP switching transistor Datasheet Characteristics of the MPS3906 bipolar transistor Type - p- n- p Collector- Emitter Voltage: - 40 V Collector- Base.
mps 3906 transistor datasheet
PNP switching transistor MPS3906 DATA SHEET STATUS Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. The product status of the device( s) described in this data sheet may have changed since this data sheet was published.